Semiconductor Constructions and Methods of Forming Electrically Conductive Contacts

ABSTRACT

Some embodiments include methods of forming electrically conductive contacts. An opening is formed through an insulative material to a conductive structure. A conductive plug is formed within a bottom region of the opening. A spacer is formed to line a lateral periphery of an upper region of the opening, and to leave an inner portion of an upper surface of the plug exposed. A conductive material is formed against the inner portion of the upper surface of the plug. Some embodiments include semiconductor constructions having a conductive plug within an insulative stack and against a copper-containing material. A spacer is over an outer portion of an upper surface of the plug and not directly above an inner portion of the upper surface. A conductive material is over the inner portion of the upper surface of the plug and against an inner lateral surface of the spacer.

TECHNICAL FIELD

Semiconductor constructions and methods of forming electricallyconductive contacts.

BACKGROUND

Memory is often incorporated into integrated circuitry. The memory maybe used, for example, in computer systems for storing data.

Memory may be provided as a large array of memory cells. Wordlines andbitlines may be provided across the array such that individual memorycells may be uniquely addressed through the combination of a wordlineand a bitline.

Numerous types of memory are available. An example class of memory isresistive random access memory (RRAM), which is of interest forutilization in existing and future data storage needs. RRAM utilizesprogrammable material having two or more stable states that differ inresistivity relative to one another. Example types of memory cells thatmay be utilized in RRAM are phase change memory (PCM) cells,programmable metallization cells (PMCs), conductive bridging randomaccess memory (CBRAM) cells, nanobridge memory cells, electrolyte memorycells, binary oxide cells, and multilayer oxide cells (for instance,cells utilizing multivalent oxides). The memory cell types are notmutually exclusive. For example, CBRAM and PMC are overlappingclassification sets.

A continuing goal of integrated circuit fabrication is to increase thelevel of integration (i.e., to scale circuitry to smaller dimensions).Wordlines and bitlines may become increasingly tightly packed across amemory array with increasing levels of integration. The wordlines andbitlines are electrically coupled with circuitry external to the memoryarray and are utilized to transfer electrical signals to and from thememory array during read/write operations. Difficulties are encounteredin increasing the level of integration of memory in that it becomesincreasingly difficult to make suitable connections from circuitryexternal of the memory array to the wordlines and bitlines. It isdesired to develop new architectures suitable for making connections towordlines and bitlines, and new methods of fabricating sucharchitectures. It is also desirable for the architectures to be suitablefor making connections to integrated circuit components other thanwordlines and bitlines.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagrammatic top view of an integrated memory array.

FIG. 2 is a cross-sectional side view along the line 2-2 of FIG. 1.

FIGS. 3-8 and 10-12 are diagrammatic cross-sectional views of asemiconductor construction at various process stages of an exampleembodiment.

FIG. 9 is a diagrammatic top view of the construction of FIG. 8 (withthe view of FIG. 8 being along the line 8-8 of FIG. 9).

FIG. 13 is a diagrammatic top view of a construction at a processingstage subsequent to that of FIG. 11.

FIG. 14 is a diagrammatic top view of a construction at a processingstage subsequent to that of FIG. 13, and is a top view of theconstruction at the processing stage of FIG. 12 (with the view of FIG.12 being along the line 12-12 of FIG. 14).

FIGS. 15 and 16 are diagrammatic cross-sectional views of exampleembodiments for utilizing the structure of FIG. 12 with a memory array.

FIGS. 17-20 are diagrammatic cross-sectional views of a semiconductorconstruction at various process stages of another example embodiment.The process stage of FIG. 17 may follow that of FIG. 4.

FIG. 21 is a diagrammatic cross-sectional view of a semiconductorconstruction at a process stage of another example embodiment. Theprocess stage of FIG. 21 may follow that of FIG. 10.

FIG. 22 is a diagrammatic top view of the construction of FIG. 21, withthe construction of FIG. 21 being along the line 21-21 of FIG. 22.

FIGS. 23 and 24 are diagrammatic top views of the construction of FIG.22 shown at processing stages subsequent that of FIG. 22 in accordancewith an example embodiment.

FIG. 25 is a cross-sectional side view of the construction of FIG. 24,with the view of FIG. 25 being along the line 25-25 of FIG. 24.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

In some embodiments, the invention includes new methods of formingelectrical contact between highly integrated structures and circuitryperipheral to such highly integrated structures, and includes newstructural configurations formed by such methods. The highly integratedstructures may include conductive lines, such as, for example, signallines and/or buses of signal lines. In some embodiments, the highlyintegrated structures may include access lines (i.e., wordlines) and/ordata lines (i.e., bitlines). Example embodiments are described withreference to FIGS. 1-25.

Referring to FIGS. 1 and 2, a portion of an example embodiment memoryarray 10 is shown in top view (FIG. 1) and cross-sectional side view(FIG. 2). The memory array comprises a first series of lines 12-14extending along a first direction, and a second series of lines 15-17extending along a second direction substantially orthogonal to the firstdirection. The term “substantially orthogonal” means that the first andsecond directions are orthogonal to one another within reasonabletolerances of fabrication and measurement.

In some embodiments, the first series of lines (12-14) may correspond towordlines, and the second series of lines (15-17) may correspond tobitlines, or vice versa.

Memory cells 18-26 are formed at regions where the wordlines andbitlines cross one another. The memory cells may comprise any suitableconfigurations, and in some embodiments may correspond to RRAM cells;such as, for example, PCM cells, PMC cells, CBRAM cells, etc. In someembodiments other structures may be between the wordlines and bitlinesbesides the memory cells. For instance, select devices (such as, forexample, diodes, transistors, switches, etc.) may be adjacent the memorycells to restrict leakage to and/or from the memory cells.

The wordlines and bitlines are connected to peripheral circuitry throughcontacts generically illustrated with boxes 27-32. The peripheralcircuitry will generally be at a looser pitch (i.e. will be less highlyintegrated) than the wordlines and bitlines, and problems may beencountered in prior art processing in attempting to electrically couplethe relatively loosely spaced peripheral circuitry with the relativelytightly spaced wordlines and bitlines. Various architectural featureshave been developed for such coupling, including so-called shark jawfeatures, staircase features, socket features, etc. However, all of sucharchitectural features consume substantial semiconductor real estate,and accordingly it is desired to develop new methods for couplingperipheral circuitry with wordlines and bitlines. Although variousembodiments were developed for establishing coupling between peripheralcircuitry and the wordlines and bitlines of a memory array, it is to beunderstood that the various structures and methods described herein maybe applied to other applications. In some embodiments, it is thecoupling which is pertinent to the invention, independent of the type ofdevice/application utilizing such coupling. In some applications, thevarious coupling structures and methods described herein may beparticularly useful for coupling lines carrying logic and/or analogsignals, such as in signal buses and/or in analog circuitry.

An example embodiment method of forming a contact is described withreference to FIGS. 3-16.

FIG. 3 shows a construction 40 comprising an electrically conductivestructure 42 within an electrically insulative material 44. Theelectrically conductive structure may be part of a line extending in andout of the page relative to the cross-sectional view of FIG. 3, and insome embodiments may be comprised by circuitry peripheral to a memoryarray. In the shown embodiment, the electrically conductive structure 42comprises a first electrically conductive material 46 extending around asecond electrically conductive material 48. The second electricallyconductive material 48 may comprise, consist essentially of, or consistof copper; and the first electrically conductive material 46 may be abarrier to prevent copper diffusion from the first material to theelectrically insulative material 44. Numerous electrically conductivecopper barrier materials are known, and such materials may comprise, forexample, ruthenium, platinum, iridium, tantalum, etc.

Although the shown electrically conductive structure 42 comprises twomaterials, in other embodiments the electrically conductive structuremay comprise only a single electrically conductive composition, and inyet other embodiments the electrically conductive structure may comprisemore than two materials. Further, although copper is described as asuitable material for the electrically conductive structure, it is to beunderstood that any suitable materials may be utilized in theelectrically conductive structure, including, for example, one or moreof various metals (for example, tungsten, titanium, etc.),metal-containing compositions (for instance, metal nitride, metalcarbide, metal silicide, etc.), and conductively-doped semiconductormaterials (for instance, conductively-doped silicon, conductively-dopedgermanium, etc.).

The electrically insulative material 44 may comprise any suitablecomposition or combination of compositions; including, for example, oneor more of silicon dioxide, silicon nitride, metal oxide (for instance,aluminum oxide), etc.

That electrically insulative material 44 is supported by a base 50. Thebase 50 may comprise semiconductor material, and in some embodiments maycomprise, consist essentially of, or consist of monocrystalline silicon.In some embodiments, the base 50 may be considered to comprise asemiconductor substrate. The term “semiconductor substrate” means anyconstruction comprising semiconductive material, including, but notlimited to, bulk semiconductive materials such as a semiconductive wafer(either alone or in assemblies comprising other materials), andsemiconductive material layers (either alone or in assemblies comprisingother materials). The term “substrate” refers to any supportingstructure, including, but not limited to, the semiconductor substratesdescribed above. In some embodiments, the base 50 may correspond to asemiconductor substrate containing one or more materials associated withintegrated circuit fabrication. Some of the materials may be under theshown region of base 50, may be between the base and the insulativematerial 44, and/or may be laterally adjacent the shown region of base50; and may correspond to, for example, one or more of refractory metalmaterials, barrier materials, diffusion materials, insulator materials,etc.

An electrically insulative barrier material 52 is over conductivestructure 42, and comprises a suitable composition to block diffusionfrom copper-containing material 48. In some embodiments, the barriermaterial 52 may comprise buried low-k (Blok) material, such as, forexample, a material comprising silicon and carbon and hydrogen. Thebarrier material 52 may be omitted in embodiments in which structure 42does not comprise a copper-containing material.

An electrically insulative material 54 is over material 52. Material 54may comprise any suitable composition or combination of compositions;and in some embodiments may comprise, consist essentially of, or consistof silicon dioxide. In some embodiments, the materials 52 and 54 may beconsidered together as a stack 55.

A carbon-containing material 56 is over insulative material 54. Thecarbon-containing material 56 may comprise, for example, transparentcarbon.

Patterned masking material 58 is over carbon-containing material 56. Themasking material 58 may comprise any suitable composition or combinationof compositions, and in some embodiments may comprisephotolithographically-patterned photoresist.

An opening 60 extends through patterned masking material 58, and suchopening is directly over conductive structure 42.

Referring to FIG. 4, opening 60 is transferred through stack 55 with oneor more suitable etches, and materials 56 and 58 (FIG. 3) are removed.In the shown embodiment, the opening has vertical sidewalls along thematerials 52 and 54, but in other embodiments the sidewalls may betapered or otherwise non-vertical. In some embodiments, a first etch maybe utilized to extend through material 54, and a second etch may beutilized to extend through material 52, and the second etch may formrecesses or cavities (not shown) under material 54. Regardless, theopening 60 exposes an upper surface 61 of the conductive structure 42.In the shown embodiment, the exposed upper surface corresponds to anupper surface of copper-containing material 48.

Referring to FIG. 5, electrically conductive material 62 is formedwithin opening 60 and directly against the exposed region of the uppersurface 61 of conductive structure 42. In the shown embodiment, theelectrically conductive material is only within opening 60, and notacross an upper surface of insulative material 54. In other embodiments,the conductive material 62 may extend across upper surface of material54 as well as within opening 60. The conductive material 62 may compriseany suitable composition or combination of compositions; and in someembodiments may comprise, consist essentially of, or consist of one ormore of various metals (for example, tungsten, titanium, etc.),metal-containing compositions (for instance, metal nitride, metalcarbide, metal silicide, etc.), and conductively-doped semiconductormaterials (for instance, conductively-doped silicon, conductively-dopedgermanium, etc.). In some embodiments, the conductive material 62 maycomprise, consist essentially of, or consist of titanium nitride. Anadvantage of titanium nitride is that such may adhere well tocopper-containing material.

Referring to FIG. 6, the electrically conductive material 62 is recessedwithin opening 60. Such recessing may be encompassed with any suitableetch or combination of etches; including, for example, one or both ofwet etching and dry etching. The recessed material 62 may be consideredto be within a bottom region 64 of opening 60, and to leave a top region66 of the opening empty. In some embodiments, the recessed material 62may be considered to form a plug 68 within the bottom region 64 ofopening 60.

In the shown embodiment, the recessed material 62 has a substantiallyplanar upper surface. In other embodiments, the upper surface may beconcave, convex, or of a roughened topography. If the topography haspinholes or voids extending therein, additional processing may beutilized to eliminate such features. For instance, planarization (forinstance, chemical-mechanical polishing) may be conducted acrossmaterial 62 prior to the recessing of material 62.

Referring to FIG. 7, spacer material 70 is formed across an uppersurface of insulative material 54 and within opening 60. The spacermaterial lines the sidewalls and bottom of the upper region 66 of theopening. The spacer material 70 may comprise any suitable composition orcombination of compositions, and may be electrically insulative in someembodiments. For instance, the spacer material 70 may comprise, consistessentially of, or consist of silicon dioxide or silicon nitride.

Referring to FIG. 8, the spacer material 70 is anistropically etched toform a spacer 72 which lines a lateral periphery 67 of the upper region66 of opening 60. The spacer narrows the upper region 66 of opening 60relative to the lower region 64 of the opening.

FIG. 9 shows a top view of the construction of FIG. 8, and shows opening60 having a closed shape (with the opening having a circular shape inthe shown embodiment, but the opening may have other shapes in otherembodiments, including, for example, elliptical, square, rectangular,polygonal, complex curved, etc.).

Referring again to FIG. 8, the spacer 70 is over an outer portion 73 ofan upper surface 71 of plug 68, and leaves an inner portion 75 of uppersurface 71 exposed. The spacer has an inner lateral surface 77.

Referring to FIG. 10, electrically conductive material 74 is formedwithin the lined upper region 66 of opening 60 and directly against theinner portion 75 of the upper surface 71 of plug 68. The electricallyconductive material 74 is also against the inner lateral surface 77 ofspacer 72, and in the shown embodiment extends across an upper surfaceof insulative material 54.

The electrically conductive material 74 may comprise any suitablecomposition or combination of compositions; and in some embodiments maycomprise, consist essentially of, or consist of one or more of variousmetals (for example, tungsten, titanium, etc.), metal-containingcompositions (for instance, metal nitride, metal carbide, metalsilicide, etc.), and conductively-doped semiconductor materials (forinstance, conductively-doped silicon, conductively-doped germanium,etc.). In some embodiments, material 74 may comprise, consistessentially of, or consist of tungsten. Tungsten may be advantageous insome embodiments in that tungsten has relatively high conductivity, andcan be more cost-effective than some other metals having highconductivity. Although material 74 is shown to be homogenous, in otherembodiments (not shown), the conductive material 74 may comprise two ormore discrete electrically conductive compositions. For instance,material 74 may comprise tungsten and titanium. In some applications,material 74 may comprise tungsten over titanium, with the titanium beingdirectly against material 62 and the tungsten being directly against thetitanium. In such applications, both the tungsten and the titanium mayextend into the lined upper region 66 of opening 60.

Referring to FIG. 11, chemical-mechanical polishing (CMP) and/or othersuitable planarization is utilized to remove conductive material 74 fromover insulative material 54, and to form a planarized upper surface 79extending across materials 54, 70 and 74. A difficulty in someconventional processes is that it can be difficult to etch or otherwiseprocess TiN during fabrication of connecting circuitry (for instance,wordlines and/or bitlines) without creating electrically conductive TiNstringers. Such stringers may create shorts across conductivestructures, destroying operability of an integrated circuit. In theillustrated embodiment, such processing of TiN may be avoided.Specifically, if a TiN-containing plug 68 is utilized for adhesion tothe copper, such plug is recessed below the material 74. Accordingly, itis only material 74 exposed to subsequent processing during fabricationof connecting circuitry, and not the TiN-containing plug 68.

Referring to FIG. 12, electrically conductive material 76 is formed overplanarized surface 79 and patterned into an electrically conductive line80. The electrically conductive material 76 may comprise any suitableelectrically conductive material, including, for example, one or more ofvarious metals, metal-containing compositions and conductively-dopedsemiconductor materials. In some embodiments, the line 80 may correspondto a wordline or a bitline, and may extend to a memory array (asdescribed in more detail with reference to FIGS. 15 and 16).

In some embodiments, the construction of FIG. 12 may be considered tocomprise the electrically conductive plug 68 having a first width W₁along the cross-section of FIG. 12. The upper surface 71 of the plugcomprises the outer portion 73 covered by spacer 72, and the innerportion 75 which is not covered by the spacer, and which is directlyagainst conductive material 74. The inner portion 75 and the conductivematerial 74 have widths along the cross-section of FIG. 12 of W₂; whichcorresponds to a second width which is less than the first width W₁. Insome embodiments, the second width W₂ may be within a range of fromabout 50% to about 90% of W₁.

The patterning of material 76 into a line may be accomplished with anysuitable processing. FIGS. 13 and 14 show a top view of construction 40,and describe an example process for forming line 80. FIG. 13 showsconductive material 76 formed entirely across the top surface ofconstruction 40, and diagrammatically illustrates an outer edge of theconductive material 74 in dashed-line view (with the dashed-line viewindicating that material 74 is beneath material 76).

FIG. 14 shows construction 40 at a processing stage subsequent to thatof FIG. 13 (and specifically, shows the construction at the processingstage described above with reference to FIG. 12). FIG. 14 shows thematerial 76 patterned into the line 80 that extends across materials 54and 74. The patterning of line 80 may be accomplished utilizing apatterned mask (not shown) and one or more suitable etches to transfer apattern from the mask through material 76. The mask may comprisephotolithographically-patterned photoresist, and/or materials associatedwith pitch-multiplication methodologies. Accordingly, line 80 may beformed to lithographic dimensions or to sublithographic dimensions. Theshown line 80 may be one of a series of lines, and may, for example, bean example bitline of a series of bitlines extending across a memoryarray, or an example wordline of a series of wordlines extending acrossthe memory array. The top view of FIG. 14 shows that the line 80comprises a third width, W₃, which is larger than the second width, W₂,of conductive material 74 in the illustrated example embodiment (i.e.,the line 80 is wider than the upper surface of the contact comprisingmaterial 74). In some embodiments, there may be less risk of detrimentalmisalignment errors in aligning the wider lines to the narrower uppersurfaces of the contacts than would be the case if the lines and uppersurfaces of the contacts were of similar widths to one another.

FIG. 15 shows construction 40 in combination with a portion of a memoryarray 10 of the type described above with reference to FIGS. 1 and 2,and specifically shows line 80 being configured as the wordline 12 whichextends across the memory array 10. The illustrated wordline extendsunder a memory cell 20, and the shown region of the wordline is alsounder a bitline 17. In the shown embodiment, wordline 12 is electricallyconnected to conductive structure 42 through an electrical contact 82comprising electrically conductive material 74 and electricallyconductive plug 68. The structure 42 may correspond to a region of theperipheral circuitry 27 described above with reference to FIG. 1.

FIG. 16 shows a configuration similar to that of FIG. 15, except thatline 80 is now part configured as the bitline 17 extending across thememory array 10. The bitline is electrically coupled to conductivestructure 42 through the electrical contact 82 comprising electricallyconductive material 74 and electrically conductive plug 68. Thestructure 42 of FIG. 16 may correspond to a region of the peripheralcircuitry 32 described above with reference to FIG. 1.

An advantage of utilizing the electrical contacts of FIGS. 15 and 16 forconnecting wordlines and/or bitlines to electrically conductivestructures (for instance, the structure 42) is that the contacts may beformed on a same pitch as the wordlines and bitlines. The utilization ofwider conductive material at the bottom of the contacts (specifically,the conductive material of the plug 68) can simplify processing, in thatit can be easier to form material at the bottom of the wide opening ascompared to forming the material at the bottom of a narrow opening(specifically, it can be easier to form conductive material within anopening having a lower aspect ratio as compared to forming the materialin an opening having a higher aspect ratio). Further, the narrowedconductive material at the top of the contacts (specifically, thematerial 74) enables the contacts to be formed with narrow upperdimensions which can fit on a same pitch as tightly-pitched wordlinesand bitlines. Thus, utilization of contacts having two conductivematerials (68 and 74) with different cross-sectional widths relative toone another can be advantageous as compared to conventional methods.

The embodiment of FIGS. 5-12 utilizes a conductive plug 68 consisting ofonly a single material (for instance, titanium nitride). In otherembodiments an analogous conductive plug may be formed to comprise twoor more different electrically conductive materials. For instance, FIGS.17-20 describe an embodiment in which a conductive plug is formed tocomprise two different electrically conductive materials.

Referring to FIG. 17, a construction 40 a is shown at a processing stagewhich may follow that of FIG. 4 in some embodiments. The construction 40a comprises a first electrically conductive material 90 formed acrossthe upper surface of insulative material 54 and within opening 60. Thematerial 90 lines opening 60, and is directly against the upper surface61 of electrically conductive structure 42. The electrically conductivematerial 90 may comprise any suitable composition or combination ofcompositions, including, for example, one or more of various metals,metal-containing compositions, and conductively-doped semiconductormaterials. In some embodiments, it may be advantageous for material 90to consist of titanium nitride, in that such may provide good adhesionto the upper surface of copper-containing material 48.

An electrically conductive material 92 is formed over material 90, andfills opening 60. Material 92 may comprise any suitable composition orcombination of compositions; and may, for example, comprise one or moreof various metals, metal-containing materials, and conductively-dopedsemiconductor materials. In some embodiments, material 92 may consist oftungsten, in that such may provide good conductivity.

Referring to FIG. 18, materials 90 and 92 are recessed within opening 60to form a plug 68 a at the bottom region 64 of the opening, whileleaving the top region 66 of the opening empty. The plug 68 a of FIG. 18is similar to the plug 68 described above with reference to FIG. 6,except that the plug 68 a comprises two materials while plug 68comprises only a single material. In some embodiments, the two materials90 and 92 of plug 68 a may both be metal-containing materials. Althoughplug 68 a is shown comprising two materials, in other embodiments theplug may comprise more than two materials; and in some embodiments theplug may comprise more than two metal-containing materials.

In some embodiments, the illustrated plug 68 a comprises material 90consisting of titanium nitride directly against an upper surface 61 ofcopper-containing material 48, and comprises material 92 consisting oftungsten directly against the titanium nitride material 90.

In the shown embodiment, the recessed materials 90 and 92 together havea substantially planar upper surface. In other embodiments, the uppersurface may be concave, convex, or of a roughened topography. If thetopography has pinholes or voids extending therein, additionalprocessing may be utilized to eliminate such features. For instance,planarization (for instance, chemical-mechanical polishing) may beconducted across material 92 prior to the recessing of materials 90 and92.

Referring to FIG. 19, processing analogous to that described above withreference to FIGS. 7-11 may be utilized to form spacer 72 over an outerportion of an upper surface of plug 68 a, and to form electricallyconductive material 74 directly against an inner portion of the uppersurface of plug 68 a. The plug 68 a and material 74 together form anelectrically conductive contact 82 a analogous to the contact 82described above with reference to FIGS. 15 and 16. The construction ofFIG. 19 has a planarized upper surface 79.

Referring to FIG. 20, processing analogous that described above withreference to FIGS. 12-14 may be utilized to form the conductive line 80of material 76 over planarized surface 79. Such conductive line may beelectrically coupled to the electrically conductive structure 42 throughthe electrically conductive contact 82 a.

The single material plug 68 of FIG. 12 may be simpler to fabricate thanthe multi-material plug 68 a of FIG. 20, which may be advantageous insome applications. In contrast, the multi-material plug 68 a of FIG. 20may be tailored for particular applications, and may, for example, haveimproved conductivity relative to the single material plug 68 of FIG.12, which may be advantageous in some applications.

In some embodiments, material 74 may comprise two or more discretecompositions, and such compositions may be formed within the upperportion 66 of opening 60 (shown in, for example, FIG. 8) with processinganalogous to that described in FIGS. 17 and 18 for forming the plug 68 aof two or more discrete compositions.

The processing of FIGS. 3-20 removes conductive material 74 (FIG. 10)from over an upper surface of material 54 (FIG. 10) prior to forming theelectrically conductive line 80 (FIG. 12). In other processing,conductive material 74 may remain over material 54 as part of theelectrically conductive line. An example of such other processing isdescribed with reference to FIGS. 21-25.

Referring to FIG. 21, a construction 40 b is shown at a processing stagewhich may follow that of FIG. 10 in some embodiments. The constructioncomprises material 74 extending across electrically insulative material54, as well is within opening 60. The portion of material 74 overinsulative material 54 has been thinned relative to the processing stageof FIG. 10. Such thinning may be accomplished utilizing planarization,such as CMP. The thinning of material 74 may be omitted in someembodiments.

FIG. 22 shows a top view of the construction of FIG. 21, and shows thematerial 74 extending entirely across an upper surface of theconstruction. An outer periphery of spacer 72 is shown in dashed-lineview in FIG. 22.

Referring to FIG. 23, the electrically conductive material 76 utilizedin bitlines and wordlines (for instance, utilized in the line 80 of FIG.12) is formed across the upper surface of construction 40 b, andaccordingly is formed over the material 74 of FIGS. 21 and 22.

Referring to FIGS. 24 and 25, the materials 76 and 74 are patterned intoa line 100 analogous to the line 80 of FIG. 12. Such patterning may beaccomplished with methodology analogous that described above withreference to FIGS. 13 and 14. The line 100 may be utilized as a bitlineor a wordline of a memory array, analogous to the utilization of line 80in memory arrays as described above with reference to FIGS. 15 and 16.In some embodiments, the line 100 may be considered to compriseelectrically conductive materials 74 and 76 extending across a region102 of the electrically conductive material 74 within opening 60. Suchregion of the electrically conductive material 74, together with theelectrically conductive plug 68, forms an electrically conductivecontact 82 b which electrically couples line 100 with the electricallyconductive structure 42.

The spacer 72 is diagrammatically illustrated in FIG. 24, and thenarrowed upper region of opening 60 is diagrammatically shown to belaterally contained by such spacer. The narrowed upper region of opening60 has a first width, W₄, and the line 100 has a second width, W₅,greater than such first width. In some embodiments, line 74 isrepresentative of a series of conductive lines formed along a pitch; andthe first width, W₄, may be less than one-half of such pitch. This maybe beneficial in numerous applications, including, for example, bitlineapplications, signal bus applications, etc.

Although the processing of FIGS. 21-25 is described utilizing a plug 68having a single material (i.e., a plug of the type described in theembodiment of FIG. 12), analogous processing may be utilized with plugshaving two or more materials (for instance, a plug 68 a of the typedescribed in the embodiment of FIG. 20). Also, although material 74 isshown to comprise a single homogenous composition, in other embodimentsmaterial 74 may comprise two or more discrete compositions.

The various embodiments described above may enable improved uniformityof contact performance and dimensions to be achieved across a wafer thanis achieved with conventional processing, and may enable electricalcoupling between tightly-pitched structures and more loosely-pitchedstructures without consuming semiconductor real estate in shark jawstructures or other architectures associated with such coupling inconventional architectures.

The electronic structures discussed above may be incorporated intoelectronic systems. Such electronic systems may be used in, for example,memory modules, device drivers, power modules, communication modems,processor modules, and application-specific modules, and may includemultilayer, multichip modules. The electronic systems may be any of abroad range of systems, such as, for example, clocks, televisions, cellphones, personal computers, automobiles, industrial control systems,aircraft, etc.

Unless specified otherwise, the various materials, substances,compositions, etc. described herein may be formed with any suitablemethodologies, either now known or yet to be developed, including, forexample, atomic layer deposition (ALD), chemical vapor deposition (CVD),physical vapor deposition (PVD), etc.

The particular orientation of the various embodiments in the drawings isfor illustrative purposes only, and the embodiments may be rotatedrelative to the shown orientations in some applications. The descriptionprovided herein, and the claims that follow, pertain to any structuresthat have the described relationships between various features,regardless of whether the structures are in the particular orientationof the drawings, or are rotated relative to such orientation.

The cross-sectional views of the accompanying illustrations only showfeatures within the planes of the cross-sections, and do not showmaterials behind the planes of the cross-sections in order to simplifythe drawings.

When a structure is referred to above as being “on” or “against” anotherstructure, it can be directly on the other structure or interveningstructures may also be present. In contrast, when a structure isreferred to as being “directly on” or “directly against” anotherstructure, there are no intervening structures present. When a structureis referred to as being “connected” or “coupled” to another structure,it can be directly connected or coupled to the other structure, orintervening structures may be present. In contrast, when a structure isreferred to as being “directly connected” or “directly coupled” toanother structure, there are no intervening structures present. Astructure is “directly above” another structure when at least a portionof it is vertically aligned with the other structure; and, in contrast,can be “above” another structure without being vertically aligned withsaid other structure.

Some embodiments include a method of forming an electrically conductivecontact. An opening is formed through an electrically insulativematerial to an electrically conductive structure. An electricallyconductive plug is formed within a bottom region of the opening. Aspacer is formed to line a lateral periphery of an upper region of theopening. The spacer is over an outer portion of an upper surface of theelectrically conductive plug and leaves an inner portion of the uppersurface exposed. An electrically conductive material is formed withinthe lined upper region of the opening and directly against the innerportion of the upper surface of the electrically conductive plug. Anelectrically conductive line is formed to extend across the electricallyinsulative material and the electrically conductive material within theopening, and to be electrically coupled with the electrically conductivematerial within the opening.

Some embodiments include a method of forming an electrically conductivecontact. A stack is provided over a copper-containing material. Thestack comprises an electrically insulative material over an electricallyinsulative copper barrier material. An opening is formed through thestack to the copper-containing material. An electrically conductive plugis formed within a bottom region of the opening. A spacer is formed toline a lateral periphery of an upper region of the opening. The spaceris over an outer portion of an upper surface of the electricallyconductive plug and leaves an inner portion of the upper surfaceexposed. An electrically conductive material is formed within the linedupper region of the opening and directly against the inner portion ofthe upper surface of the electrically conductive plug.

Some embodiments include a method of forming an electrically conductivecontact. An opening is formed through an electrically insulativematerial to an electrically conductive material. An electricallyconductive plug is formed within a bottom region of the opening. Aspacer is formed along a lateral periphery of an upper region of theopening to narrow the upper region of the opening. The spacer is over anouter portion of an upper surface of the electrically conductive plugand leaves an inner portion of the upper surface exposed. Anelectrically conductive material is formed over the electricallyinsulative material and within the narrowed upper region of the opening.The electrically conductive material is directly against the innerportion of the upper surface of the electrically conductive plug. Theelectrically conductive material is patterned into a line that extendsacross the stack and across a region of the electrically conductivematerial within the opening.

Some embodiments include a method of forming an electrically conductivecontact. An opening is formed through an electrically insulativematerial to an electrically conductive material. An electricallyconductive plug is formed within a bottom region of the opening. Aspacer is formed along a lateral periphery of an upper region of theopening to narrow the upper region of the opening. The spacer is over anouter portion of an upper surface of the electrically conductive plugand leaves an inner portion of the upper surface exposed. Anelectrically conductive material is formed over the electricallyinsulative material and within the narrowed upper region of the opening.The electrically conductive material is directly against the innerportion of the upper surface of the electrically conductive plug. Aplanarized surface is formed to extend across the electricallyconductive material and the electrically insulative material.

Some embodiments include a semiconductor construction having anelectrically conductive plug over and directly against an electricallyconductive structure. The electrically conductive plug has a first widthalong a cross-section. An electrically insulative spacer is over anddirectly against the electrically conductive plug. The spacer isdirectly above an outer portion of an upper surface of the electricallyconductive plug and not directly above an inner portion of the uppersurface of the electrically conductive plug. The inner portion has asecond width along the cross-section. The second width is less than thefirst width. The spacer and electrically conductive plug have outerlateral surfaces against an electrically insulative material. Anelectrically conductive material is over and directly against the innerportion of the upper surface of the electrically conductive plug, anddirectly against an inner lateral surface of the spacer. An electricallyconductive line extends across the electrically insulative material andthe electrically conductive material, and is electrically coupled to theelectrically conductive structure through the electrically conductivematerial and the electrically conductive plug.

Some embodiments include a semiconductor construction having a stackover a copper-containing material. The stack comprises an electricallyinsulative material over an electrically insulative copper barriermaterial. An electrically conductive plug is within the stack anddirectly against the copper-containing material. An electricallyinsulative spacer is within the stack. The electrically insulativespacer is over and directly against an outer portion of an upper surfaceof the electrically conductive plug and not directly above over an innerportion of the upper surface. An electrically conductive material isover and directly against the inner portion of the upper surface of theelectrically conductive plug. The electrically conductive material isdirectly against an inner lateral surface of the spacer.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

1-35. (canceled)
 36. A semiconductor construction, comprising: acopper-containing material supported by a silicon-containing base, astack over the copper-containing material, the stack comprising a firstinsulative material over an insulative copper barrier material; aconductive plug within the stack and directly against thecopper-containing material; an insulative spacer within the stack; theinsulative spacer being over and directly against an outer portion of anupper surface of the conductive plug and not directly above an innerportion of the upper surface; a conductive material over and directlyagainst the inner portion of the upper surface of the conductive plug;the conductive material being directly against an inner lateral surfaceof the spacer; and wherein the conductive plug comprises titaniumnitride directly against the copper-containing material, and comprisestungsten directly against the titanium nitride.
 37. The semiconductorconstruction of claim 36 wherein the insulative spacer comprises silicondioxide.
 38. The semiconductor construction of claim 36 wherein theinsulative spacer comprises silicon nitride.
 39. The semiconductorconstruction of claim 36 wherein the conductive material comprisesmetal.
 40. A semiconductor construction, comprising: a stack over afirst conductive material, the stack comprising a second insulativematerial over a first insulative material; the first and secondinsulative materials being compositionally different from one another; aconductive plug within the stack and on the first conductive material,the conductive plug having a lateral sidewall directly against both thefirst and second insulative materials; an insulative spacer over anddirectly against an outer portion of an upper surface of the conductiveplug and not directly above an inner portion of the upper surface, theinsulative spacer having an outer lateral surface directly against thesecond insulative material of the stack and not directly against thefirst insulative material of the stack; a second conductive materialover and directly against the inner portion of the upper surface of theconductive plug; the second conductive material being directly againstan inner lateral surface of the spacer; the second conductive materialextending along an upper surface of the stack and forming a lower partof a conductive line; and a third conductive material directly over andalong the second conductive material and forming an upper part of theconductive line, the second and third conductive materials beingcompositionally different from one another.
 41. The semiconductorconstruction of claim 40 wherein the first conductive material is acopper-containing material, and wherein the first insulative material ofthe stack is a copper barrier material.
 42. The semiconductorconstruction of claim 40 wherein the conductive plug comprises only asingle conductive material.
 43. The semiconductor construction of claim40 wherein the conductive plug comprises two or more conductivematerials.
 44. The semiconductor construction of claim 40 wherein theconductive plug comprises one or both of tungsten and titanium.
 45. Thesemiconductor construction of claim 40 wherein the conductive plugcomprises one or more of metal nitride, metal silicide and metalcarbide.
 46. The semiconductor construction of claim 40 wherein theconductive plug comprises conductively-doped semiconductor material. 47.A method of forming a conductive contact, comprising: forming an openingthrough an insulative material to a conductive structure; forming aconductive plug within a bottom region of the opening and directlyagainst the conductive structure; forming a spacer to line a lateralperiphery of an upper region of the opening; the spacer being over anddirectly against an outer portion of an upper surface of the conductiveplug and leaving an inner portion of the upper surface exposed; forminga conductive material within the lined upper region of the opening anddirectly against the inner portion of the upper surface of theconductive plug; forming a conductive line which extends across theinsulative material and which is electrically coupled with theconductive structure through the conductive material within the opening;and wherein the conductive plug comprises titanium nitride directlyagainst copper of the conductive structure, and comprises tungstendirectly against the titanium nitride.
 48. The method of claim 47wherein the conductive material comprises metal.
 49. The method of claim47 wherein the conductive line is a bitline or a wordline, and isincorporated into a memory array.
 50. The method of claim 49 wherein thememory array is an RRAM array.
 51. A method of forming a conductivecontact, comprising: forming an opening through an insulative materialto a metal-containing conductive structure; forming a metal-containingconductive plug within a bottom region of the opening; forming a spaceralong a lateral periphery of an upper region of the opening to narrowthe upper region of the opening; the spacer being over an outer portionof an upper surface of the metal-containing conductive plug and leavingan inner portion of the upper surface exposed; forming a conductivematerial over the insulative material and within the narrowed upperregion of the opening; the conductive material being directly againstthe inner portion of the upper surface of the metal-containingconductive plug; and patterning the conductive material into aconductive line that extends across the insulative material and across aregion of the conductive material within the opening.
 52. The method ofclaim 51 wherein the narrowed upper region of the opening comprises afirst width, and wherein the conductive line has a second width acrossthe opening, with the second width being larger than the first width.53. The method of claim 51 wherein the conductive line is a bitline or awordline, and is incorporated into a memory array; and wherein thememory array is an RRAM array.